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Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2003 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, Vol. 195, no 3, 516-522 p.Article in journal (Refereed) Published
Abstract [en]

The lattice parameters of as-grown hydride vapor phase epitaxy GaN layers on sapphire, free-standing layers after the substrate lift-off, and homoepitaxial layers grown on the free-standing layers are measured. The in-plane and out-of-plane strains are calculated. It is found that the substrate removal leads to strain relaxation in the crack-free GaN free-standing layers to a certain extent. A small increase of the strain in the GaN homoepitaxial layers compared to the free-standing layers is observed. Cathodoluminescence (CL) spectroscopy and imaging, photoluminescence (PL) and Raman measurements are used as complementary tools in the residual strain analysis.

Place, publisher, year, edition, pages
2003. Vol. 195, no 3, 516-522 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-46738DOI: 10.1002/pssa.200306145OAI: oai:DiVA.org:liu-46738DiVA: diva2:267634
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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Darakchieva, VanyaPaskova, TanjaPaskov, PlamenMonemar, Bo

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