liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-2597-3322
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
Aixtron AG, D-52072 Aachen, Germany.
Aixtron AG, D-52072 Aachen, Germany.
Show others and affiliations
2008 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 310, no 5, 906-910 p.Article in journal (Refereed) Published
Abstract [en]

In this work we are presenting growth results of thick gallium nitride (GaN), numerical modeling and optimization of a vertical hot-walled halide vapor-phase epitaxy reactor. Using a simulation model, the growth rate and thickness uniformity of the GaN layers have been predicted and optimized. The simulation results have been correlated with experiments to verify the model. Using constant precursor flows, the average growth rate over a 2 in substrate was increased with a factor of four by only optimizing the composition of N2 and H2 in the carrier gas and the carrier gas flow rates. With a simple sticking model, assuming Ga mass transport-limited growth, the growth rate and thickness uniformity could be estimated. Photoluminescence mapping of the grown layer shows that the layers have excellent optical properties and a high degree of uniformity. © 2007 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2008. Vol. 310, no 5, 906-910 p.
Keyword [en]
A1. Fluid flows, A1. Growth models, A1. Mass transfer, A2. Growth from vapor, A3. Hydride vapor-phase epitaxy, B2. Semiconducting III-V materials
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46778DOI: 10.1016/j.jcrysgro.2007.11.062OAI: oai:DiVA.org:liu-46778DiVA: diva2:267674
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Hemmingsson, CarlPozina, GaliaMonemar, Bo

Search in DiVA

By author/editor
Hemmingsson, CarlPozina, GaliaMonemar, Bo
By organisation
The Institute of TechnologyMaterials Science
In the same journal
Journal of Crystal Growth
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 61 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf