Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
2008 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 310, no 5, 906-910 p.Article in journal (Refereed) Published
In this work we are presenting growth results of thick gallium nitride (GaN), numerical modeling and optimization of a vertical hot-walled halide vapor-phase epitaxy reactor. Using a simulation model, the growth rate and thickness uniformity of the GaN layers have been predicted and optimized. The simulation results have been correlated with experiments to verify the model. Using constant precursor flows, the average growth rate over a 2 in substrate was increased with a factor of four by only optimizing the composition of N2 and H2 in the carrier gas and the carrier gas flow rates. With a simple sticking model, assuming Ga mass transport-limited growth, the growth rate and thickness uniformity could be estimated. Photoluminescence mapping of the grown layer shows that the layers have excellent optical properties and a high degree of uniformity. © 2007 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2008. Vol. 310, no 5, 906-910 p.
A1. Fluid flows, A1. Growth models, A1. Mass transfer, A2. Growth from vapor, A3. Hydride vapor-phase epitaxy, B2. Semiconducting III-V materials
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46778DOI: 10.1016/j.jcrysgro.2007.11.062OAI: oai:DiVA.org:liu-46778DiVA: diva2:267674