Growth and separation related properties of HVPE-GaN free-standing films
2002 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 246, no 3-4, 207-214 p.Conference paper (Other academic)
Hydride vapour phase epitaxial GaN layers with thicknesses in the range 10-150µm grown directly on sapphire or using metalorganic vapour phase deposited GaN templates have been separated by laser-induced lift-off technique. Both faces of the free-standing films have been studied by photoluminescence and high-resolution X-ray measurements and stress analysis has been performed. A comparison with as-grown films reveals the changes in the properties of the material after the separation process. The separation conditions are found to be responsible for the bowing in the free-standing GaN films while the type and intensity of emission bands, as well as defect and impurity distributions are related only to the growth conditions. The residual strain in the free-standing layers is attributed to both non-optimized separation conditions and non-uniform defect density in the films. © 2002 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2002. Vol. 246, no 3-4, 207-214 p.
A1. Emission properties, A1. Impurities, A1. Lattice parameters, A1. Stress, A3. Free-standing films, B1. Gallium nitride
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46780DOI: 10.1016/S0022-0248(02)01743-8OAI: oai:DiVA.org:liu-46780DiVA: diva2:267676