liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Extended defects in GaN films grown at high growth rate
Faculty of Physics, Sofia University, 5, J Bourchier Blvd., 1164 Sofia, Bulgaria.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2002 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 14, no 48, 13269-13275 p.Article in journal (Refereed) Published
Abstract [en]

A description of the present knowledge of the layer microstructure typical for thick GaN films grown at high growth rates is presented. The GaN layers are grown by hydride vapour phase epitaxy on sapphire and different buffers are used. The variety of extended defects present in such highly mismatched system are summarized, with the emphasis on their impact on the crystal quality. The defects are reviewed in two main categories according to the microstructural development during growth: large-scale nonuniformities and microstructural crystallographic defects. The first category comprises three-dimensional structural features developed mainly in the interface region, while the second are typical extended defects, i.e., dislocations with different Burgers vectors, nanopipes, inversion domain boundaries and stacking faults. The quality of the layers was improved vastly as a consequence of our understanding of the correlation of growth parameters and microstructure.

Place, publisher, year, edition, pages
2002. Vol. 14, no 48, 13269-13275 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46781DOI: 10.1088/0953-8984/14/48/377OAI: oai:DiVA.org:liu-46781DiVA: diva2:267677
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Paskova, TanjaMonemar, Bo

Search in DiVA

By author/editor
Paskova, TanjaMonemar, Bo
By organisation
The Institute of TechnologyDepartment of Physics, Chemistry and BiologyMaterials Science
In the same journal
Journal of Physics: Condensed Matter
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 54 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf