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On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
Persson, Per
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
ORCID iD:
0000-0001-9140-6724
Hultman, Lars
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
ORCID iD:
0000-0002-2837-3656
Janson, M.S.
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden.
Hallen, A.
Hallén, A., Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden.
Yakimova, Rositsa
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Panknin, D.
FWIM Forschungszentrum Rossendorf, D-01474 Schoenfeld-Weissig, Germany.
Skorupa, W.
FWIM Forschungszentrum Rossendorf, D-01474 Schoenfeld-Weissig, Germany.
Show others and affiliations
2002 (English)
In:
Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 92, no 5, p. 2501-
Article in journal (Refereed) Published
Abstract [en]
[No abstract available]
Place, publisher, year, edition, pages
2002. Vol. 92, no 5, p. 2501-
National Category
Engineering and Technology
Identifiers
URN:
urn:nbn:se:liu:diva-46806
DOI:
10.1063/1.1499749
OAI: oai:DiVA.org:liu-46806
DiVA, id:
diva2:267702
Available from:
2009-10-11
Created:
2009-10-11
Last updated:
2017-12-13
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Persson, Per
Hultman, Lars
Yakimova, Rositsa
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Yakimova, Rositsa
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