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Electrical characterization of carbon monoxide sensitive high temperature sensor diode based on catalytic metal gate - Insulator - Silicon carbide structure
School of Science and Engineering, Ishinomaki Senshu University, Ishinomaki, Japan.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .ORCID iD: 0000-0002-2817-3574
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
Center for Sensor Materials, Michigan State University, East Lansing, MI 48824-2320, United States.
2002 (English)In: IEEE Sensors Journal, ISSN 1530-437X, E-ISSN 1558-1748, Vol. 2, no 5, 379-385 p.Article in journal (Refereed) Published
Abstract [en]

Field-effect gas sensors based on catalytic metal-insulator-silicon carbide (MISiC) devices are investigated. For the evaluation of the barrier height, the temperature dependence of the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of MISiC Schottky diodes were investigated in CO and O2 atmospheres. Four methods were used to evaluate how a change in gas ambient influences the barrier height of the diode: a change of the intersection current at zero voltage in the forward direction of the I-V curve, a change of the temperature dependence in the forward direction and the reverse direction, respectively, of the I-V curve, and a change of the intersection voltage of 1/C2 versus V plot. The four methods gave similar changes in the barrier height for the device in 8000 ppm CO and 4000 ppm O2. The values of barrier height obtained from the I-V curves were here normalized by the ideality factor calculated from I-V measurements. The correlation between the barrier height change obtained from the I-V and the C-V measurements, respectively, is discussed regarding the ideality factor. It is proposed that absolute value of the barrier height under flat-band condition is the most important for the evaluation of the barrier height. In the mixture of CO and O2, the change of barrier height obtained from the C-V curve had roughly the same values as that from the I-V curve when normalized by the ideality factors. © 2002 IEEE.

Place, publisher, year, edition, pages
2002. Vol. 2, no 5, 379-385 p.
Keyword [en]
Barrier height, Gas sensor, High temperature, Ideality factor, Metal-insulator-silicon carbide (MISiC)
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46815DOI: 10.1109/JSEN.2002.805036OAI: oai:DiVA.org:liu-46815DiVA: diva2:267711
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Lloyd-Spets, AnitaLundström, Ingemar

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