Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC
2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 81, no 21, 3945-3947 p.Article in journal (Refereed) Published
The carbon vacancy in 4H-SiC was studied by photoexcitation-electron-paramagnetic-resonance (EPR). The different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the associated defects at W-band frequencies. A deep donor model with the (+/0) level located at (1.47±0.06) eV above the valence band could explained the photo-EPR results obtained for positively charged carbon vacancy.
Place, publisher, year, edition, pages
2002. Vol. 81, no 21, 3945-3947 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46856DOI: 10.1063/1.1522822OAI: oai:DiVA.org:liu-46856DiVA: diva2:267752