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Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 81, no 21, 3945-3947 p.Article in journal (Refereed) Published
Abstract [en]

The carbon vacancy in 4H-SiC was studied by photoexcitation-electron-paramagnetic-resonance (EPR). The different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the associated defects at W-band frequencies. A deep donor model with the (+/0) level located at (1.47±0.06) eV above the valence band could explained the photo-EPR results obtained for positively charged carbon vacancy.

Place, publisher, year, edition, pages
2002. Vol. 81, no 21, 3945-3947 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-46856DOI: 10.1063/1.1522822OAI: oai:DiVA.org:liu-46856DiVA: diva2:267752
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-03

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Nguyen, Tien SonMagnusson, BjörnJanzén, Erik

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