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Metastable oxygen adsorption on SiC(0 0 0 1)-v3 × v3 R30°
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
2002 (English)In: Surface Science, ISSN 0039-6028, Vol. 519, no 1-2, 73-78 p.Article in journal (Refereed) Published
Abstract [en]

Initial oxygen adsorption at different temperatures on the SiC(0 0 0 1)- v3 × v3 R30° surface has been studied using photoemission. Oxygen exposures with the sample at 800 °C results in formation of stable oxides. However, after small exposures (0.1-10 L) with the sample at room temperature or cooled to ˜100 K additional structures appear in the O 1s spectrum that are identified to originate from metastable oxygen. Similar additional structures were recently revealed on Si(111)-7 × 7 and suggested to originate from adsorption of metastable molecular oxygen in an ins-paul configuration. © 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2002. Vol. 519, no 1-2, 73-78 p.
Keyword [en]
Oxygen, Silicon carbide
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46868DOI: 10.1016/S0039-6028(02)02195-7OAI: oai:DiVA.org:liu-46868DiVA: diva2:267764
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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Virojanadara, ChariyaJohansson, Leif

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