Metastable oxygen adsorption on SiC(0 0 0 1)-v3 × v3 R30°
2002 (English)In: Surface Science, ISSN 0039-6028, Vol. 519, no 1-2, 73-78 p.Article in journal (Refereed) Published
Initial oxygen adsorption at different temperatures on the SiC(0 0 0 1)- v3 × v3 R30° surface has been studied using photoemission. Oxygen exposures with the sample at 800 °C results in formation of stable oxides. However, after small exposures (0.1-10 L) with the sample at room temperature or cooled to ˜100 K additional structures appear in the O 1s spectrum that are identified to originate from metastable oxygen. Similar additional structures were recently revealed on Si(111)-7 × 7 and suggested to originate from adsorption of metastable molecular oxygen in an ins-paul configuration. © 2002 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2002. Vol. 519, no 1-2, 73-78 p.
Oxygen, Silicon carbide
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46868DOI: 10.1016/S0039-6028(02)02195-7OAI: oai:DiVA.org:liu-46868DiVA: diva2:267764