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Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
St. Petersburg State Technical Univ., St. Petersburg 195251, Russian Federation.
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
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2002 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, Vol. 36, no 11, 1270-1275 p.Article in journal (Refereed) Published
Abstract [en]

Results obtained in studying the effect of ionizing radiation on epitaxial layers and devices based on silicon carbide (SiC) are considered. It is shown that, in investigations of wide-gap semiconductors (WGS), account should be taken of how the rate of removal of mobile charge carriers - the standard parameter in determining the radiation hardness of a material - depends on temperature. The use of data obtained only at room temperature may lead to an incorrect assessment of the radiation hardness of WGS. A conclusion is made that the WGS properties combine, on the one hand, high radiation hardness of high-temperature devices based on these semiconductors and, on the other, the possibility of effective radiation-induced doping (e.g., for obtaining semi-insulating local regions in a material at room temperature). © 2002 MAIK "Nauka/Interperiodica".

Place, publisher, year, edition, pages
2002. Vol. 36, no 11, 1270-1275 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46869DOI: 10.1134/1.1521229OAI: oai:DiVA.org:liu-46869DiVA: diva2:267765
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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Yakimova, Rositsa

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