Influence of high-energy Si+ ion irradiation on microstructure and mechanical properties of alumina films
2002 (English)In: Surface & Coatings Technology, ISSN 0257-8972, Vol. 158-159, 534-537 p.Article in journal (Refereed) Published
Amorphous alumina films, approximately 600 nm in thickness, prepared on Si(100) substrates by RF magnetron sputtering were irradiated with 2.0 MeV Si ions at a dose of 1 × 1017 ions/cm2 and the influence on the composition, microstructure, and mechanical properties was examined by Rutherford backscattering. X-ray diffraction and nano-indentation measurements. It was found that the O/Al ratio in the films was approximately 1.5, and there was no significant alteration in this ratio after ion irradiation. However, a structural change from amorphous to the crystalline ?-alumina was observed. Hardness and elastic modulus of the irradiated film were significantly increased from approximately 11 and 181 GPa up to approximately 25 and 246 GPa, respectively. © 2002 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2002. Vol. 158-159, 534-537 p.
Amorphous alumina, Gamma-alumina, Ion beam-induced crystallization, Nano-indentation measurement, Rutherford backscattering spectrometry, X-ray diffraction
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46884DOI: 10.1016/S0257-8972(02)00300-6OAI: oai:DiVA.org:liu-46884DiVA: diva2:267780