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Optical properties of donor-triad cluster in GaAs and GaN
Souza De Almeida, J., Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, Brazil, Department of Physics, Condensed Matter Theory Group, Uppsala University, SE-751 21 Uppsala, Sweden.
Da Silva, A.J., Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, Brazil.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Computational Physics .
Department of Physics, Condensed Matter Theory Group, Uppsala University, SE-751 21 Uppsala, Sweden.
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2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 81, no 17, 3158-3160 p.Article in journal (Refereed) Published
Abstract [en]

The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions. © 2002 American Institute of Physics.

Place, publisher, year, edition, pages
2002. Vol. 81, no 17, 3158-3160 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-46890DOI: 10.1063/1.1515121OAI: oai:DiVA.org:liu-46890DiVA: diva2:267786
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Norman, Patrick

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