Optical properties of donor-triad cluster in GaAs and GaN
2002 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 81, no 17, 3158-3160 p.Article in journal (Refereed) Published
The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions. © 2002 American Institute of Physics.
Place, publisher, year, edition, pages
2002. Vol. 81, no 17, 3158-3160 p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46890DOI: 10.1063/1.1515121OAI: oai:DiVA.org:liu-46890DiVA: diva2:267786