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High-temperature annealing and surface photovoltage shifts on Si(111)7×7
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology. (Yt- och Halvledarfysik, Surface and Semiconductor Physics)
Graduate School of Advanced Integration Science, Chiba University, Japan.
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology. (Yt- och Halvledarfysik, Surface and Semiconductor Physics)
2008 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 78, no 3, 035318- p.Article in journal (Refereed) Published
Abstract [en]

The relation between annealing temperature and surface photovoltage (SPV) shifts on the Si(111)7×7 surface of lightly n-doped substrates has been studied by core-level and valence-band photoelectron spectroscopies at 100 K. The SPV shift was found to depend strongly on the annealing temperature and the photon flux. Between 900 and 1150 °C the magnitude of the SPV shift shows a general decrease with annealing temperature. After a narrow plateau, the SPV shift becomes positive for annealings at 1250 and 1270 °C. As a consequence, the adatom surface state of the 7×7 surface appears above the Fermi level. The unexpected SPV shift can be explained by the formation of a p-type layer during high-temperature annealing of the Si sample. The role of boron and carbon contaminations has been discussed in this context in the literature. By correlating the SPV shifts with the C 1s and B 1s core-level signals, we conclude that carbon, but not boron, is involved in the formation of the p-type layer. Further, our results show that the annealing temperature plays a crucial role when binding energies are determined from photoemission spectra at low temperature. The effect is of particular importance in the study of surface band-gap openings related to phase transitions at low temperature.

Place, publisher, year, edition, pages
2008. Vol. 78, no 3, 035318- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46988DOI: 10.1103/PhysRevB.78.035318ISI: 000258190300094OAI: oai:DiVA.org:liu-46988DiVA: diva2:267884
Available from: 2013-03-26 Created: 2009-10-11 Last updated: 2017-12-13Bibliographically approved

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Zhang, HanminHansson, GöranUhrberg, Roger

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