Growth characteristics of SiC in a hot-wall CVD reactor with rotation
2002 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 241, no 4, 431-438 p.Article in journal (Refereed) Published
A version of the hot-wall reactor, where rotation has been added is investigated for the growth of SiC. The capacity of the reactor is 2 in wafers. The rotation is realized by gas foil levitation of a single plate carrying all three wafers. Uniformities of thickness and doping below 1% and 5%, respectively have been obtained. The run to run reproducibility of n-type doping is within ±10%. The morphology is studied and greatly improved through a modification of the hot-zone, which however made the thickness uniformity marginally worse. © 2002 Published by Elsevier Science B.V.
Place, publisher, year, edition, pages
2002. Vol. 241, no 4, 431-438 p.
A1. Crystal morphology, A1. Doping, A3. Chemical vapor deposition processes, A3. Hot wall reactors, B2. Semiconducting materials
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46997DOI: 10.1016/S0022-0248(02)00921-1OAI: oai:DiVA.org:liu-46997DiVA: diva2:267893