Optical characterization of III-nitrides
2002 (English)Conference paper (Refereed)
Recent developments in material properties of GaN and related heterostructure combinations are reviewed, with emphasis on optical data. We discuss recent polarized photoluminescence (PL) data on the free excitons in GaN, obtained from thick HVPE grown layers. The exchange splitting constant is found to be about 0.6 meV, a more accurate value than previous suggestions. The PL signatures of shallow donors and acceptors, i.e. the bound excitons, are discussed and tentatively identified. Intrinsic point defects are discussed in terms of stability and experimental signatures. Quantum well structures in the InGaN/GaN and GaN/AlGaN systems are briefly discussed, with emphasis on localization of carriers and excitons. © 2002 Published by Elsevier Science B.V.
Place, publisher, year, edition, pages
2002. Vol. 93, no 1-3, 112-122 p.
Acceptors, AlGaN, Defects, Donors, Excitons, GaN, InGaN, Photoluminescence
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47001DOI: 10.1016/S0921-5107(02)00006-5OAI: oai:DiVA.org:liu-47001DiVA: diva2:267897