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Erratum: Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates (Journal of Applied Physics (2001) 90 (6011))
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, Faculty of Science & Engineering.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Faculty of Physics, Sofia University, Sofia 1164, Bulgaria.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, no 10 I, 6778 p.6778Article in journal (Other academic) Published
Abstract [en]

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Place, publisher, year, edition, pages
2002. Vol. 91, no 10 I, 6778 p.6778
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47009DOI: 10.1063/1.1471940OAI: oai:DiVA.org:liu-47009DiVA: diva2:267905
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-09-09Bibliographically approved

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Paskova, TanjaPaskov, PlamenPersson, PerMonemar, Bo

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Department of Physics, Chemistry and BiologyFaculty of Science & EngineeringThe Institute of TechnologySemiconductor MaterialsThin Film Physics
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