Electrical characterisation of SrTiO3/Si interfaces
2002 (English)In: Journal of Non-Crystalline Solids, ISSN 0022-3093, Vol. 303, no 1, 185-189 p.Article in journal (Refereed) Published
Deposition of SrTiO3 (STO) thin films by ultra-high vacuum rf magnetron sputtering was performed in order to produce high-quality STO/p-Si (1 0 0) interfaces and STO insulator layers with high dielectric constants. The deposition temperatures were in the range from room temperature to 550 °C. Capacitance-voltage (C-V) and conductance-frequency measurements showed that the dielectric constant of the films ranges from 55 to 120. C-V measurements on Al/STO/p-Si structures clearly revealed the creation of metal-insulator-semiconductor diodes. The interface state densities (Dit) at the STO/p-Si interfaces were obtained from admittance spectroscopy measurements. The samples deposited at lower temperatures revealed values of Dit between 2 × 1011 and 3.5 × 1012 eV-1 cm-2 while the higher temperature deposited samples had a higher Dit ranging between 1 × 1011 and 1 × 1013 eV-1 cm-2. The above results were also well correlated to X-ray diffraction measurements, Rutherford backscattering spectroscopy, and spectroscopic ellipsometry. © 2002 Elsevier Science Ltd. All rights reserved.
Place, publisher, year, edition, pages
2002. Vol. 303, no 1, 185-189 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47021DOI: 10.1016/S0022-3093(02)00983-3OAI: oai:DiVA.org:liu-47021DiVA: diva2:267917