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Electrical characterisation of SrTiO3/Si interfaces
Department of Physics, University of Ioannina, P.O. Box 1186, 451 10 Ioannina, Greece.
Department of Physics, University of Ioannina, P.O. Box 1186, 451 10 Ioannina, Greece.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2002 (English)In: Journal of Non-Crystalline Solids, ISSN 0022-3093, Vol. 303, no 1, 185-189 p.Article in journal (Refereed) Published
Abstract [en]

Deposition of SrTiO3 (STO) thin films by ultra-high vacuum rf magnetron sputtering was performed in order to produce high-quality STO/p-Si (1 0 0) interfaces and STO insulator layers with high dielectric constants. The deposition temperatures were in the range from room temperature to 550 °C. Capacitance-voltage (C-V) and conductance-frequency measurements showed that the dielectric constant of the films ranges from 55 to 120. C-V measurements on Al/STO/p-Si structures clearly revealed the creation of metal-insulator-semiconductor diodes. The interface state densities (Dit) at the STO/p-Si interfaces were obtained from admittance spectroscopy measurements. The samples deposited at lower temperatures revealed values of Dit between 2 × 1011 and 3.5 × 1012 eV-1 cm-2 while the higher temperature deposited samples had a higher Dit ranging between 1 × 1011 and 1 × 1013 eV-1 cm-2. The above results were also well correlated to X-ray diffraction measurements, Rutherford backscattering spectroscopy, and spectroscopic ellipsometry. © 2002 Elsevier Science Ltd. All rights reserved.

Place, publisher, year, edition, pages
2002. Vol. 303, no 1, 185-189 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-47021DOI: 10.1016/S0022-3093(02)00983-3OAI: diva2:267917
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2013-10-30

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Kugler, Veronika MozhdehHelmersson, Ulf
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