Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum
2002 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 240, no 3-4, 501-507 p.Article in journal (Refereed) Published
Investigation on residual Al, B, and N co-doping of 4H-SiC epitaxial layers is reported. The layers were produced by sublimation epitaxy in Ta growth cell environment at different growth temperatures and characterized by secondary ion mass spectrometry. The vapor interaction with Ta was considered through calculations of cohesive energies of several Si-, Al-, B-, and N-containing vapor molecules and also of diatomic Ta-X molecules. An analysis of kinetic mechanisms responsible for impurity incorporation is performed. Among residuals, B exhibits a stronger incorporation dependence on temperature and growth at lower temperatures can favor B decrease in the layers. Under the growth conditions in this study (Ta environment and presence of attendant Al and N), B incorporation is assisted by Si2C vapor molecule. Boron tends to occupy carbon sites at higher temperatures, i.e. higher growth rates. © 2002 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2002. Vol. 240, no 3-4, 501-507 p.
A1. Doping, A1. Impurities, A3. Vapor phaseepitaxy, B1. Inorganic compounds, B2. Semiconducting materials
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47028DOI: 10.1016/S0022-0248(02)01077-1OAI: oai:DiVA.org:liu-47028DiVA: diva2:267924