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High-resolution Si 2p core-level study of the K/Si(111)-(3×1) surface
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
2002 (English)Conference paper, Published paper (Refereed)
Abstract [en]

The structure of the K/Si(111)-(3 × 1) surface was studied by high-resolution core-level photoelectron spectroscopy. Five surface components were observed in the Si 2p core-level spectra. Compared to the bulk component, three components are shifted to lower and two to higher binding energies. The two components with the lowest binding energies are assigned to the top-layer Si atoms bonded to the K atoms with different configurations. The component with highest binding energy has a contribution from the p-bonded Si atoms of the top layer. The two other components originate from the Si atoms of the second and third layers.

Place, publisher, year, edition, pages
2002. Vol. 9, no 2, 1235-1239 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47046DOI: 10.1142/S0218625X02003561OAI: oai:DiVA.org:liu-47046DiVA: diva2:267942
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-09-07

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Zhang, HanminUhrberg, Roger

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