liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Show others and affiliations
2002 (English)In: J. Cryst. Growth, Vols. 237-239, 2002, Vol. 237-239, no 1-4 II, 1230-1234 p.Conference paper, Published paper (Refereed)
Abstract [en]

Sublimation epitaxy is a growth technique viable for SiC epilayer fabrication since the method is technologically simple, the growth rate is high (up to 100 µm/h) and the as-grown surfaces are very smooth. However, the remaining issues of purity and intentional doping control need to be studied and the behaviour understood before this method can be applied to device fabrication. We will show results of nitrogen, aluminium and boron incorporation in layers grown by sublimation epitaxy. The epilayers have been studied using electrical, secondary ion mass spectrometry and cathodoluminescence measurements as well as by low-temperature photoluminescence spectroscopy. Possible solutions to lower especially the nitrogen concentrations in epilayers are presented along with experimental results leading to epilayer net doping concentrations in the ND - NA ~ 1015cm-3 range. © 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2002. Vol. 237-239, no 1-4 II, 1230-1234 p.
Keyword [en]
A1. Impurities, A1. Mass transfer, A3. Physical vapor deposition processes, B2. Semiconducting silicon compunds
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47047DOI: 10.1016/S0022-0248(01)02177-7OAI: oai:DiVA.org:liu-47047DiVA: diva2:267943
Conference
ICCG-13/ICVGE-11
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-09

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Syväjärvi, MikaelYakimova, RositsaKakanakova-Georgieva, AneliaJanzén, Erik

Search in DiVA

By author/editor
Syväjärvi, MikaelYakimova, RositsaKakanakova-Georgieva, AneliaJanzén, Erik
By organisation
The Institute of TechnologySemiconductor Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 86 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf