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Polytype homogeneity and doping distribution in homoepitaxial 4H SiC grown on nonplanar substrates
Department of Microelectronics and Information Technology, Kungliga Tekniska Högskolan, Electrum 229, SE-164 40 Kista, Sweden.
Department of Microelectronics and Information Technology, Kungliga Tekniska Högskolan, Electrum 229, SE-164 40 Kista, Sweden.
Department of Microelectronics and Information Technology, Kungliga Tekniska Högskolan, Electrum 229, SE-164 40 Kista, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 80, no 10, 1755- p.Article in journal (Refereed) Published
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2002. Vol. 80, no 10, 1755- p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47067DOI: 10.1063/1.1458048OAI: oai:DiVA.org:liu-47067DiVA: diva2:267963
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Kakanakova-Georgieva, AneliaYakimova, Rositsa

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