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Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
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2002 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 80, no 9, 1550- p.Article in journal (Refereed) Published
Abstract [en]

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Place, publisher, year, edition, pages
2002. Vol. 80, no 9, 1550- p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47071DOI: 10.1063/1.1455698OAI: oai:DiVA.org:liu-47071DiVA: diva2:267967
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2016-08-31

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Paskova, TanjaPersson, PerHultman, LarsMonemar, Bo

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