liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Monte Carlo simulation of high field hole transport in 4H-SiC including band to band tunneling and optical interband transitions
Department of Information Technology and Media, Mid-Sweden University, S-85170 Sundsvall, Sweden.
Royal Institute of Technology, KTH, Electrum 229, S-16440 Kista, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
Department of Information Technology and Media, Mid-Sweden University, S-85170 Sundsvall, Sweden, Royal Institute of Technology, KTH, Electrum 229, S-16440 Kista, Sweden.
Show others and affiliations
2002 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 314, no 1-4, 68-71 p.Conference paper, Published paper (Other academic)
Abstract [en]

The high field hole transport in 4H-SiC has been studied using a full band Monte Carlo (MC) simulation model that includes band to band tunneling and allows mixing of the band states during carrier drift. Impact ionization coefficients along the c-axis direction have been extracted and compared with experimental data. It is shown that the band to band tunneling mechanism is crucial in order to explain experimental results. The carrier distribution function obtained from the MC simulations has been used to determine the breakdown luminescence spectra coming from interband transitions. Our results are in good agreement with the available experimental luminescence spectra for SiC polytypes, and the importance of including interband tunneling is clearly demonstrated. © 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2002. Vol. 314, no 1-4, 68-71 p.
Keyword [en]
4H-SiC, Breakdown luminescence, Impact ionization, Monte Carlo simulation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47074DOI: 10.1016/S0921-4526(01)01356-4OAI: oai:DiVA.org:liu-47074DiVA: diva2:267970
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Sannemo, Ulf

Search in DiVA

By author/editor
Sannemo, Ulf
By organisation
The Institute of TechnologyDepartment of Science and Technology
In the same journal
Physica. B, Condensed matter
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 16 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf