Step-bunching in SiC epitaxy: Anisotropy and influence of growth temperature
2002 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 236, no 1-3, 297-304 p.Article in journal (Refereed) Published
The anisotropy of step-bunching in silicon carbide (SiC) epitaxy on off-oriented substrates is an effect which occurs in step-flow growth. The formation mechanism is discussed in relation to the temperature dependence of lateral growth velocities and the interface roughness. The macrostep appearance is probably related to the formation of stable faces with low surface free energy. As-grown surfaces of sublimation grown layers have been studied in detail using atomic force microscopy. Data of macrosteps have been collected in relation to the widths of the macrosteps and their heights at different growth temperatures. The relative difference between the surface free energies of the terrace and the facet of the step is estimated for 6H-SiC as well as for 4H-SiC grown on the Si- and C-face in the temperature range from 1750°C to 1800°C. © 2002 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2002. Vol. 236, no 1-3, 297-304 p.
A1. Defects, A1. Morphological stability, A1. Surfaces, B1. Organic compounds, B2. Semiconducting silicon compounds
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47081DOI: 10.1016/S0022-0248(01)02331-4OAI: oai:DiVA.org:liu-47081DiVA: diva2:267977