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Site-occupying behavior of boron in compensated p-type 4H-SiC grown by sublimation epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Solid State Electronics, Royal Institute of Technology, P.O. Box E229, S-16440 Kista, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, no 5, 3471-3473 p.Article in journal (Refereed) Published
Abstract [en]

Results from electrical and optical measurements of boron in compensated p-type 4H-SiC layers doped with Al, N, and B are reported. The layers were produced by sublimation epitaxy and characterized by secondary ion mass spectrometry, capacitance-voltage, and cathodoluminescence techniques. The boron-related contribution to the net acceptor concentration in the layers as well as the boron-related emission at ~505 nm are detected for various growth conditions. The effect of the concentrations of the attendant impurities Al and N, concentration ratio of Al to N atoms, and growth rate on the site-occupying behavior of boron in the layers is discussed. © 2002 American Institute of Physics.

Place, publisher, year, edition, pages
2002. Vol. 91, no 5, 3471-3473 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47090DOI: 10.1063/1.1433931OAI: oai:DiVA.org:liu-47090DiVA: diva2:267986
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Kakanakova-Georgieva, AneliaYakimova, RositsaJanzén, Erik

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