liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Feasibility study of 25 V SiGe RF-power transistors for cellular base station output amplifiers
Ericsson Microelectronics AB, SE-164 81 Kista, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
2002 (English)Conference paper, Published paper (Refereed)
Abstract [en]

For 2+ GHz-bandwidth applications, the commonly used bipolar Si RF-power transistors in the output amplifiers in cellular base stations for mobile communications are pushed to the limit of performance. The objective of this work was to study the feasibility of using SiGe/Si grown on pre-processed Si wafers for power-HBTs operating at 25 V for improved performance. The large size HBT devices (2 × 0.1 mm2) were processed using an existing 100 mm poly-Si emitter RF power BJT technology with Au metallization and some necessary modified steps for SiGe implementation. The base layers with designed Ge and B profiles were deposited either by MBE or CVD. The devices showed very high BVcbo (>80 V) with very low leakage currents. The current gain was very stable over a wide IC range, and weakly influenced by the environmental temperature. At 2 GHz, the CW output power of 20 W (at 25 V) was obtained with an efficiency of 68% in class AB operation. The long-term temperature stability was excellent. SiGe RF power-HBTs could be operated at full output power for an extended time without any external temperature bias compensation, which is virtually impossible with conventional Si-BJTs. © 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2002. Vol. 89, no 1-3, 88-92 p.
Keyword [en]
Bipolar transistor, Epitaxy, Heterojunction, Power amplifier, Si, SiGe
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47094DOI: 10.1016/S0921-5107(01)00763-2OAI: oai:DiVA.org:liu-47094DiVA: diva2:267990
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-09-07

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Ni, Wei-Xin

Search in DiVA

By author/editor
Ni, Wei-Xin
By organisation
The Institute of TechnologySurface and Semiconductor Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 62 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf