liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Surface diffusion limited nucleation of Ge dots on the Si(001) surface
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
Show others and affiliations
2002 (English)Conference paper, Published paper (Refereed)
Abstract [en]

The formation of Ge islands during MBE growth is a spontaneous process and these islands, i.e. dots, are usually randomly arranged. In order to implement these nanoscaled islands into device applications, ordering of epitaxial dots is a crucial step. We report a study on the MBE growth of Ge islands on Si(001) substrates, containing <110>-oriented square and long stripe type patterns defined by anisotropic wet etching of Si, in order to provide more understanding of how surface diffusion of Ge atoms would influence the formation of Ge islands on various types of surfaces. It has been found that there were preferential nucleation sites for Ge islands along the bottom edges of the Si ridges. The Ge islands at the edge positions were larger than those formed on the free surface and they could be regularly spaced. Due to the consumption of Ge at the bottom edges of ridge patterns, the density of Ge dots on the free surface varied between ˜ 3 × 108 and ˜ 1 × 109 cm-2 when changing the spatial separation between two adjacent Si ridges (2-100 µm). A Ge mean diffusion length of ˜ 7.5 µm has been determined for Ge growth at 700 °C. © 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2002. Vol. 89, no 1-3, 151-156 p.
Keyword [en]
Diffusion, Ge, MBE, Nucleation, Quantum dot, SEM
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47096DOI: 10.1016/S0921-5107(01)00822-4OAI: oai:DiVA.org:liu-47096DiVA: diva2:267992
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-09-07

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Elfving, AndersHansson, GöranNi, Wei-Xin

Search in DiVA

By author/editor
Elfving, AndersHansson, GöranNi, Wei-Xin
By organisation
The Institute of TechnologySurface and Semiconductor Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 48 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf