Surface structure of Si(100) with submonolayer coverages of C
2002 (English)Conference paper (Refereed)
We report a combined STM, LEED and AES study of Si(100) surfaces prepared by coevaporation from two MBE-sources with Si and SiC, respectively. The flux from the SiC source contains 10% C, enabling studies of deposited layers with C-concentrations in the range 0-10%. After room temperature deposition, the structures have been annealed at 600 °C to generate a c(4 × 4) reconstruction. This has previously been reported to contain from 0.0 to 0.5 monolayers (ML) of C. Annealing at 800 °C irreversibly transforms the c(4 × 4) surface to a 2 × 1-reconstructed surface that contains precipitates of SiC. Since only 0.07 ML of C is needed to have 98% of the surface covered with the c(4 × 4) reconstruction, we conclude that the c(4 × 4) reconstruction is impurity-induced rather than having C-atoms in well defined positions within each unit cell. The c(4 × 4) reconstruction is attributed to a basic structure containing buckled parallel ad-dimers, which in approximately 50% of the reconstructed unit cells is decorated with perpendicular dimers. © 2002 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2002. Vol. 89, no 1-3, 415-419 p.
Carbon, Reconstruction, Si(100), Silicon, STM, Surface
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47098DOI: 10.1016/S0921-5107(01)00845-5OAI: oai:DiVA.org:liu-47098DiVA: diva2:267994