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Surface structure of Si(100) with submonolayer coverages of C
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
2002 (English)Conference paper, Published paper (Refereed)
Abstract [en]

We report a combined STM, LEED and AES study of Si(100) surfaces prepared by coevaporation from two MBE-sources with Si and SiC, respectively. The flux from the SiC source contains 10% C, enabling studies of deposited layers with C-concentrations in the range 0-10%. After room temperature deposition, the structures have been annealed at 600 °C to generate a c(4 × 4) reconstruction. This has previously been reported to contain from 0.0 to 0.5 monolayers (ML) of C. Annealing at 800 °C irreversibly transforms the c(4 × 4) surface to a 2 × 1-reconstructed surface that contains precipitates of SiC. Since only 0.07 ML of C is needed to have 98% of the surface covered with the c(4 × 4) reconstruction, we conclude that the c(4 × 4) reconstruction is impurity-induced rather than having C-atoms in well defined positions within each unit cell. The c(4 × 4) reconstruction is attributed to a basic structure containing buckled parallel ad-dimers, which in approximately 50% of the reconstructed unit cells is decorated with perpendicular dimers. © 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2002. Vol. 89, no 1-3, 415-419 p.
Keyword [en]
Carbon, Reconstruction, Si(100), Silicon, STM, Surface
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47098DOI: 10.1016/S0921-5107(01)00845-5OAI: oai:DiVA.org:liu-47098DiVA: diva2:267994
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-09-07

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Zhang, HanminUhrberg, RogerHansson, Göran

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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySurface and Semiconductor Physics
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  • apa
  • harvard1
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