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From ambi- To unipolar behavior in discotic dye field-effect transistors
Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany, Evonik Degussa GmbH, Process Technology and Engineering, Process Technology New Processes, Rodenbacher Chaussee 4, 63457 Hanau, Germany.
Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry .
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2008 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 20, no 14, 2715-2719 p.Article in journal (Refereed) Published
Abstract [en]

A study was conducted to demonstrate solution-processable ambipolar organic field-effect transistors based on a discotic dye. Such single component devices allow the study of the influence of supramolecular ordering on FET charge transport properties. These transistors exhibited ambipolarity even without any structural order. The absence of p-type behavior could not be explained by the increase of hole injection barrier or by interface trapping. It was rather observed that the change in morphology most probably lead to such a phenomenon. These findings further suggest that besides charge injection barriers and interface trapping, structural composition, that is, microscopic domain boundaries together with local defects in one-dimensional columnar systems, also trigger the loss of ambipolarity owing to lowering of the minority charge carrier mobility.

Place, publisher, year, edition, pages
2008. Vol. 20, no 14, 2715-2719 p.
National Category
Engineering and Technology
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URN: urn:nbn:se:liu:diva-47099DOI: 10.1002/adma.200702992OAI: oai:DiVA.org:liu-47099DiVA: diva2:267995
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Osikowicz, WojciechSalaneck, William R

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