liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
2002 (English)Conference paper, Published paper (Refereed)
Abstract [en]

The combination of a low temperature (LT) Si layer and an oxygen doped compliant layer grown at LT (200-250°C) was studied for the growth of thin, flat and highly relaxed Si1-xGex layers. Samples with 15-45 nm thick oxygen doped layers were used for 100-140 nm thick relaxed Si1-xGex layers. 2-D XRD mapping determined the degree of relaxation and composition of the Si1-xGex layers. AFM was used to study the roughness of the highly relaxed layers. It was observed that the roughness decreased with decreasing thickness of the LT Si layer. Layers, which show moderate relaxation during growth and are further relaxed by annealing at 875°C show the lowest roughness. © 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2002. Vol. 89, no 1-3, 355-359 p.
Keyword [en]
Compliant layer, Growth, MBE, Relaxation, Si1-xGex
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47101DOI: 10.1016/S0921-5107(01)00766-8OAI: oai:DiVA.org:liu-47101DiVA: diva2:267997
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-09-07

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Ni, Wei-XinHansson, Göran

Search in DiVA

By author/editor
Ni, Wei-XinHansson, Göran
By organisation
The Institute of TechnologySurface and Semiconductor Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 68 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf