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Optical investigation of CdSe/ZnSe quantum nanostructures
Institute of Semiconductor Physics NASU, Kiev 03028, Ukraine.
Ioffe Physico-Technical Institute, St. Petersburg 194021, Russian Federation.
Institut de Ciència de Materials de Barcelona (CSIC), Campus UAB, 08193 Bellaterra, Spain.
Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain.
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2002 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, Vol. 17, no 2, 173-177 p.Article in journal (Refereed) Published
Abstract [en]

We have used resonant and non-resonant Raman scattering as well as photoluminescence and cathodoluminescence experiments to study the structure and composition properties of CdxZn1-xSe formed by migration enhanced epitaxy of CdSe layers on ZnSe buffers. The spectral change of the photoluminescence maximum correlates with the increase of the Cd content, depending on the nominal CdSe thickness in the 1.5-3.0 ML range. The inhomogeneous broadening of the photoluminescence band is caused by the composition difference between the two-dimensional mixed CdxZn1-xSe layer and the inserted islands with larger Cd concentration. This is confirmed by phonon frequency changes in resonant Raman scattering for samples with different nominal CdSe thicknesses as well as in Stokes and anti-Stokes frequency changes observed in the 1.5 ML sample. Attention is paid to the role of defects on Raman scattering and photoluminescence for the 3.15 ML sample.

Place, publisher, year, edition, pages
2002. Vol. 17, no 2, 173-177 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-47118DOI: 10.1088/0268-1242/17/2/315OAI: diva2:268014
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-09-22

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