Thick film Au-gate field-effect devices sensitive to NO2
2002 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, Vol. 81, no 2-3, 296-300 p.Article in journal (Refereed) Published
Screen printed thick film gold gate MOS capacitors are selectively sensitive to the presence of NO2 in air. Metallo-organic gold inks produce open gate structures, with positive flat-band-voltage shifts of 2.72mV/ppm at 140ppm of NO2 in air, comparable to PVD deposited thin film devices. Standard gold pastes are denser, coarser grained thick films of alloyed composition, which reverse the polarity of the flat-band-voltage shift. No cross sensitivity to H2 or NO is apparent. © 2002 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2002. Vol. 81, no 2-3, 296-300 p.
Chemical gas sensors, Field effect, Nitrogen dioxide, Thick films
IdentifiersURN: urn:nbn:se:liu:diva-47128DOI: 10.1016/S0925-4005(01)00969-8OAI: oai:DiVA.org:liu-47128DiVA: diva2:268024