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Defect engineering in Czochralski silicon by electron irradiation at different temperatures
Lindström, J.L., Department of Physics, Solid State Physics, University of Lund, P.O. Box 118, SE-22100 Lund, Sweden.
Institute of Solid State and Semiconductor Physics, BY-220072 Minsk, Belarus.
Institute of Solid State and Semiconductor Physics, BY-220072 Minsk, Belarus, Centre for Electronic Materials, UMIST, P.O. Box 88, Manchester M60 1QD, United Kingdom.
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2002 (English)In: Nuclear Instruments and Methods in Physics Reseach B, ISSN 0168-583X, Vol. 186, no 1-4, 121-125 p.Article in journal (Refereed) Published
Abstract [en]

Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electrons in a wide range of temperatures (80-900 K) have been performed. The samples with different contents of oxygen (16O,18O) and carbon (12C,13C) isotopes were investigated. The main defect reactions are found to depend strongly on irradiation temperature and dose, as well as on impurity content and pre-history of the samples. Some new radiation-induced defects are revealed after irradiation at elevated temperatures as well as after a two-step (hot+room-temperature (RT)) irradiation. © 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2002. Vol. 186, no 1-4, 121-125 p.
Keyword [en]
Carbon, Defects, Electron irradiation, Oxygen, Silicon
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-47132DOI: 10.1016/S0168-583X(01)00871-0OAI: oai:DiVA.org:liu-47132DiVA: diva2:268028
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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