Charge carrier mobility in substituted polythiophene-based diodes
2001 (English)In: Synthetic metals, ISSN 0379-6779, Vol. 125, no 3, 419-422 p.Article in journal (Refereed) Published
We have investigated the transport properties of the semiconducting polymer poly(3-(2'-methoxy-5'-octylphenyl)thiophene) (POMeOPT). We have measured the current-voltage (C-V) characteristics of single polymer layer devices in two regimes contact limited current and bulk-limited current. The passage from one regime to the other was done upon insertion of a conducting polymer poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT-PSS) between the metallic electrode and the semiconducting polymer. With PEDOT-PSS as electrode, the polymer gave space-charge limited current (SCLC) with the mobility dependent on electric field. Fitting the data, we were able to obtain important parameters, such as the zero-field mobility and the characteristic field. We have compared our results with the well-studied polymer poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) in similar experiments earlier reported. © 2001 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2001. Vol. 125, no 3, 419-422 p.
MEH-PPV-based diodes, Polythiophene-based diodes, Semiconducting polymer
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47136DOI: 10.1016/S0379-6779(01)00402-7OAI: oai:DiVA.org:liu-47136DiVA: diva2:268032