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Amplification of the signal in triode structures of ion detectors based on 6H-SIC epitaxial films
A. F. Ioffe Physico-Technical Institute, Polytekhnichaskaja 26, 194021, St. Petersburg, Russian Federation.
A. F. Ioffe Physico-Technical Institute, Polytekhnichaskaja 26, 194021, St. Petersburg, Russian Federation.
A. F. Ioffe Physico-Technical Institute, Polytekhnichaskaja 26, 194021, St. Petersburg, Russian Federation.
A. F. Ioffe Physico-Technical Institute, Polytekhnichaskaja 26, 194021, St. Petersburg, Russian Federation.
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 26, 4447-4449 p.Article in journal (Refereed) Published
Abstract [en]

The possibility of about 50 times the inneramplification of signals in SiC-based detectors of short-range ions is shown. The detector has an n-p-n+-like structure, where the p-type base was grown epitaxially on a 6H n+-SiC substrate. To complete the structure a Schottky barrier was made on top. Detector parameters were investigated in a "floating base" regime. Alpha particles from 244Cm were used and the augmentation of signal (E) with increasing applied voltage (U) was investigated. A superlinear increase of E was observed with a significant (tens of times) amplification of the introduced by the alpha particle nonequilibrium charge. It was also found that the nonuniformity of the diffusion-drift carrier transport parameters in the films does not exceed 10%. © 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 79, no 26, 4447-4449 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-47152DOI: 10.1063/1.1428765OAI: oai:DiVA.org:liu-47152DiVA: diva2:268048
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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