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Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Faculty of Physics, Sofia University, Sofia 1164, Bulgaria.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2001 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 90, no 12, 6011-6016 p.Article in journal (Refereed) Published
Abstract [en]

Thick hydride vapor phase epitaxial GaN layers are grown on metalorganic chemical vapor deposited GaN template layers as well as directly on sapphire, with the aim of investigating the effect of the template on the strain relaxation and spatial distribution of free carriers in the overgrown GaN films. Spatially resolved cross-sectional micro-Raman spectroscopy, cathodoluminescence, and transmission electron microscopy show improved crystalline quality for growth on metalorganic chemical vapor deposited GaN templates. The highly doped and highly defective near-substrate layer composed of columnar domains, typically present in hydride vapor phase epitaxial GaN films grown directly on sapphire, is absent in the layers grown on templates. Consequently, this results in elimination of the nonuniformities of free electron distribution, a lower residual free carrier concentration (<1017 cm-3), and improved strain relaxation. © 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 90, no 12, 6011-6016 p.
National Category
Engineering and Technology
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URN: urn:nbn:se:liu:diva-47157DOI: 10.1063/1.1415363OAI: oai:DiVA.org:liu-47157DiVA: diva2:268053
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Paskova, TanjaPaskov, PlamenPersson, PerMonemar, Bo

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