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Behavior of background impurities in thick 4H-SiC epitaxial layers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2001 (English)In: Appl. Surf. Sci., Vol. 184, 2001, Vol. 184, no 1-4, 242-246 p.Conference paper, Published paper (Refereed)
Abstract [en]

Behavior of background impurities in 4H-SiC layers is studied in terms of several growth process parameters. The layers were produced by sublimation epitaxy in Ta and Hf, as well as in graphite growth cell environment. Cathodoluminescence imaging and spectroscopy of cleaved samples demonstrate the impurity - thickness uniformity along thick (40-260 µm) layers. The effect of the Ta and Hf environment on the levels of residual impurities is considered through calculations of cohesive energies of Ta-X and Hf-X diatomic molecules and comparing them with those obtained for N-, Al- and B-containing vapor molecules. © 2001 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2001. Vol. 184, no 1-4, 242-246 p.
Keyword [en]
4H-SiC, Cathodoluminescence, Cohesive energy, Residual impurities, Sublimation epitaxy, Ta (Hf) environment
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47160DOI: 10.1016/S0169-4332(01)00495-0OAI: oai:DiVA.org:liu-47160DiVA: diva2:268056
Conference
European Materials Research Society 2001 Symposium F - Amorphous and Crystalline Silicon Carbide: Materials and Applications, 5-8 June 2001, Strasbourg, France
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-05-25

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Kakanakova-Georgieva, AneliaYakimova, RositsaSyväjärvi, MikaelJanzén, Erik

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