liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Numerical study of Bloch electron dynamics in wide band-gap semiconductors
Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden.
Department of Electronics, Kungl. Tekniska Högskolan, Electrum 229, S-164 40 Kista, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
2001 (English)In: Applied Surface Science, ISSN 0169-4332, Vol. 184, no 1-4, 199-203 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, we are using numerical calculations to demonstrate the importance of band to band tunneling in wide band-gap semiconductors. We have considered 4H-SiC, 3C-SiC and wurtzite GaN as prototype semiconductors in the demonstration. Wide band-gap semiconductors allow device operation under very high-applied electric fields, where significant band to band tunneling is expected to occur. Hexagonal wide band-gap semiconductors have a valence band structure with a large number of bands separated by rather small energies. Our calculation shows that this leads to a very significant band to band tunneling even at relatively low electric fields. In cubic wide band-gap semiconductors the tunneling is much less pronounced. However, at the valence band maximum the band separations are small enough to allow significant band to band tunneling. The spin-orbit interaction tends to bend the band near the maximum creating degradation from a parabolic curvature. This bending is found to significantly influence the band to band tunneling process. © 2001 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2001. Vol. 184, no 1-4, 199-203 p.
Keyword [en]
GaN, Interband tunneling, SiC, Spin-orbit splitting
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-47163DOI: 10.1016/S0169-4332(01)00503-7OAI: diva2:268059
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Sannemo, Ulf
By organisation
The Institute of TechnologyDepartment of Science and Technology
In the same journal
Applied Surface Science
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 24 hits
ReferencesLink to record
Permanent link

Direct link