Numerical study of Bloch electron dynamics in wide band-gap semiconductors
2001 (English)In: Applied Surface Science, ISSN 0169-4332, Vol. 184, no 1-4, 199-203 p.Article in journal (Refereed) Published
In this paper, we are using numerical calculations to demonstrate the importance of band to band tunneling in wide band-gap semiconductors. We have considered 4H-SiC, 3C-SiC and wurtzite GaN as prototype semiconductors in the demonstration. Wide band-gap semiconductors allow device operation under very high-applied electric fields, where significant band to band tunneling is expected to occur. Hexagonal wide band-gap semiconductors have a valence band structure with a large number of bands separated by rather small energies. Our calculation shows that this leads to a very significant band to band tunneling even at relatively low electric fields. In cubic wide band-gap semiconductors the tunneling is much less pronounced. However, at the valence band maximum the band separations are small enough to allow significant band to band tunneling. The spin-orbit interaction tends to bend the band near the maximum creating degradation from a parabolic curvature. This bending is found to significantly influence the band to band tunneling process. © 2001 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2001. Vol. 184, no 1-4, 199-203 p.
GaN, Interband tunneling, SiC, Spin-orbit splitting
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47163DOI: 10.1016/S0169-4332(01)00503-7OAI: oai:DiVA.org:liu-47163DiVA: diva2:268059