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Oxide growth on SiC(0 0 0 1) surfaces
Schmeißer, D., Angewandte Physik-Sensorik, BTU Cottbus, Erich-Weinert-Str. 1, 03046 Cottbus, Germany.
Angewandte Physik-Sensorik, BTU Cottbus, Erich-Weinert-Str. 1, 03046 Cottbus, Germany.
Angewandte Physik-Sensorik, BTU Cottbus, Erich-Weinert-Str. 1, 03046 Cottbus, Germany.
Angewandte Physik-Sensorik, BTU Cottbus, Erich-Weinert-Str. 1, 03046 Cottbus, Germany.
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2001 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 184, no 1-4, 340-345 p.Article in journal (Refereed) Published
Abstract [en]

The oxidation of 6H SiC(0 0 0 1) surfaces is studied by high resolution photoelectron spectroscopy. We compare the oxides formed by HF dip, by room temperature treatment in ozone, and by thermal oxidation in air at 1000 °C, respectively. We find a stable intermediate layer in all investigated systems which differs from the bulk oxide that is stable up to 1200 °C. Our data suggest that the growth of the SiO2 layer proceeds via that intermediate silicate layer. © 2001 Published by Elsevier Science B.V.

Place, publisher, year, edition, pages
2001. Vol. 184, no 1-4, 340-345 p.
Keyword [en]
Depth profiling, FET device, Ozone and thermal oxidation, SiC oxide interface, Silicate layer
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47164DOI: 10.1016/S0169-4332(01)00514-1OAI: oai:DiVA.org:liu-47164DiVA: diva2:268060
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Lloyd-Spets, Anita

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