Oxide growth on SiC(0 0 0 1) surfaces
2001 (English)In: Applied Surface Science, ISSN 0169-4332, Vol. 184, no 1-4, 340-345 p.Article in journal (Refereed) Published
The oxidation of 6H SiC(0 0 0 1) surfaces is studied by high resolution photoelectron spectroscopy. We compare the oxides formed by HF dip, by room temperature treatment in ozone, and by thermal oxidation in air at 1000 °C, respectively. We find a stable intermediate layer in all investigated systems which differs from the bulk oxide that is stable up to 1200 °C. Our data suggest that the growth of the SiO2 layer proceeds via that intermediate silicate layer. © 2001 Published by Elsevier Science B.V.
Place, publisher, year, edition, pages
2001. Vol. 184, no 1-4, 340-345 p.
Depth profiling, FET device, Ozone and thermal oxidation, SiC oxide interface, Silicate layer
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47164DOI: 10.1016/S0169-4332(01)00514-1OAI: oai:DiVA.org:liu-47164DiVA: diva2:268060