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Luminescence from stacking faults in 4H SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 24, 3944-3946 p.Article in journal (Refereed) Published
Abstract [en]

A previously unreported photoluminescence spectrum observed in certain 4H SiC bipolar diodes after extended forward voltage operation is reported. We assign this emission to exciton recombination at local potential fluctuations caused by stacking faults, which are created during operation of the diodes. Possible recombination mechanisms responsible for the spectrum are discussed. © 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 79, no 24, 3944-3946 p.
National Category
Engineering and Technology
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URN: urn:nbn:se:liu:diva-47168DOI: 10.1063/1.1425084OAI: oai:DiVA.org:liu-47168DiVA: diva2:268064
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Carlsson, FredrikBergman, PederJanzén, Erik

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