Luminescence from stacking faults in 4H SiC
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 79, no 24, 3944-3946 p.Article in journal (Refereed) Published
A previously unreported photoluminescence spectrum observed in certain 4H SiC bipolar diodes after extended forward voltage operation is reported. We assign this emission to exciton recombination at local potential fluctuations caused by stacking faults, which are created during operation of the diodes. Possible recombination mechanisms responsible for the spectrum are discussed. © 2001 American Institute of Physics.
Place, publisher, year, edition, pages
2001. Vol. 79, no 24, 3944-3946 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47168DOI: 10.1063/1.1425084OAI: oai:DiVA.org:liu-47168DiVA: diva2:268064