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High-resolution core-level spectroscopy of Si(100)c(4 × 2) and some metal-induced Si(111)√3 × √3 surfaces
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
2001 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 13, no 49, 11181-11193 p.Article in journal (Refereed) Published
Abstract [en]

High-resolution core-level spectroscopy has been applied to the Si(100)c(4 × 2) surface. A correct decomposition of the Si 2p spectrum of the clean surface is important for studies of adsorption of different species and the formation of various surface reconstructions. A very well-resolved Si 2p spectrum is presented for the Si(100)c(4 × 2) surface. The decomposition of this spectrum verifies the original decomposition scheme introduced by Landemark et al (Landemark E, Karlsson C J, Chao Y-C and Uhrberg R I G 1992 Phys. Rev. Lett. 69 1588). Core-level spectra of some metal-induced Si(111)√3 × √3 surfaces are also presented. A comparison is made between the √3 × √3 reconstructions formed on Si(111) by In, a group III atom, and by Sn, a group IV atom. Both the 4d core levels of the adatoms and the Si 2p core-level spectra are discussed. Different kinds of deviation from an ideal surface may introduce a significant broadening of the core-level spectra. The effect of additional Ag atoms is discussed in the case of the Ag/Si(111)√3 × √3 surface. By reducing the surplus of Ag atoms on this surface, a Si 2p spectrum with extremely narrow components has been obtained.

Place, publisher, year, edition, pages
2001. Vol. 13, no 49, 11181-11193 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-47169DOI: 10.1088/0953-8984/13/49/306ISI: 000172921100007OAI: diva2:268065
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2013-03-27

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Uhrberg, Roger
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Surface and Semiconductor PhysicsThe Institute of Technology
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