Trapped carrier electroluminescence (TraCE) - A novel method for correlating electrical and optical measurements
2001 (English)In: Physica B, Vols. 308-310, 2001, Vol. 308-310, 1165-1168 p.Conference paper (Refereed)
SiC is a semiconductor with very good material properties for high power, high frequency and high temperature applications. During device fabrication irradiation with particles is often used, e.g., ion-implantation, which creates intrinsic defects. The most persistent defect in SiC is DI that appears after irradiation and subsequent high temperature annealing. A direct method called Trapped Carrier Electroluminescence (TraCE) for correlating minority carrier traps with luminescence measurements is presented. A semi-transparent Schottky diode under reverse bias is illuminated with a laser pulse of above band gap light to create minority carriers that are captured to traps in the space charge region. Majority carriers are introduced when the reverse bias is removed and the space charge region is reduced. The majority carriers recombine with the trapped minority carriers and the emitted light from the recombination is detected. TraCE has been used to study and correlate the DI bound exciton luminescence from intrinsic defects in SiC with an electrically observed hole trap HS1. © 2001 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2001. Vol. 308-310, 1165-1168 p.
DI, Defects, SiC, TraCE
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47173DOI: 10.1016/S0921-4526(01)00936-XOAI: oai:DiVA.org:liu-47173DiVA: diva2:268069