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Strain relaxation in GaNxP1-x alloy: Effect on optical properties
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Division of Information and Communication Sciences, Macquarie University, Sydney, NSW, Australia.
Microstructural Analysis Unit, University of Technology, Sydney, NSW, Australia.
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2001 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 308-310, 106-109 p.Article in journal (Refereed) Published
Abstract [en]

By using scanning electron microscopy and cathodoluminescence (CL), a decrease in radiative efficiency of GaNP alloy with increasing N content is seen due to the formation of structural defects. The defect formation is attributed to relaxation of tensile strain in the GaNP layer, which is lattice mismatched to GaP substrate. Several types of extended defects including dislocations, microcracks and pits are revealed in partly relaxed GaNxP1-x epilayers with x=1.9%, whereas coherently strained layers exhibit high crystalline quality for x up to 4%. According to the CL measurements, all extended defects act as competing, non-radiative channels leading to the observed strong decrease in the radiative efficiency. From CL mapping experiments, non-uniformity of strain distribution around the extended defects is partly responsible for the broadening of the photoluminescence (PL) spectra recorded in the macro-PL experiments. © 2001 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier, 2001. Vol. 308-310, 106-109 p.
Keyword [en]
Extended defects, GANP, Luminescence, Strain
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47178DOI: 10.1016/S0921-4526(01)00708-6ISI: 000173660100026OAI: oai:DiVA.org:liu-47178DiVA: diva2:268074
Conference
21st International Conference on Defects in Semiconductors, Giessen, Germany, July 16-20, 2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13Bibliographically approved

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Buyanova, Irina A.Chen, Weimin

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