liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Enhanced soft x-ray reflectivity of Cr/Sc multilayers by ion assisted sputter deposition
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
2001 (English)In: Proceedings of SPIE, the International Society for Optical Engineering, ISSN 0277-786X, E-ISSN 1996-756X, Vol. 4506, 84-92 p.Conference paper, Published paper (Other academic)
Abstract [en]

Cr/Sc multilayers have been grown on Si substrates using DC magnetron sputtering. The multilayers are intended as condenser mirrors in a soft x-ray microscope operating at the wavelength 3.374 nm. They were designed for normal reflection of the first and second order with multilayer periods of 1.692 nm and 3.381 nm, and layer thickness ratios of 0.471 and 0.237, respectively. At-wavelength soft x-ray reflectivity measurements were carried out using a reflectometer with a compact soft x-ray laser-plasma source. The multilayers were irradiated during growth with Ar ions, varying both in energy (9-113 eV) and flux, in order to stimulate the ad-atom mobility and improve the interface flatness. It was found that to obtain a maximum soft x-ray reflectivity with a low flux (Cr=0.76, Sc=2.5) of Ar ions a rather high energy of 53 eV was required. Such energy also caused intermixing of the layers. By the use of a solenoid surrounding the substrate, the arriving ion-to-metal flux ratio could be increased 10 times and the ion energy could be decreased. A high flux (Cr=7.1, Sc=23.1) of low energy (9 eV) Ar ions founded the most favourable growth condition in order to limit the intermixing with a subsistent surface flatness.

Place, publisher, year, edition, pages
2001. Vol. 4506, 84-92 p.
Keyword [en]
Cr/Sc, Ion assisted sputter deposition, Ion energy, Ion flux, Multilayer, Reflectivity, Soft x-ray microscopy, Water-window
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47186DOI: 10.1117/12.450948OAI: oai:DiVA.org:liu-47186DiVA: diva2:268082
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Eriksson, FredrikBirch, Jens

Search in DiVA

By author/editor
Eriksson, FredrikBirch, Jens
By organisation
The Institute of TechnologyThin Film Physics
In the same journal
Proceedings of SPIE, the International Society for Optical Engineering
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 177 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf