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In-plane and in-depth nonuniformities in defect distribution in GaN and InGaN epilayers
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland.
Semiconductor Science and Technology Laboratory, Macquarie University, Sydney, NSW, Australia.
Department of Physics and Measurement Technology, Linkoping University, Linkoping, Sweden.
Department of Physics and Measurement Technology, Linkoping University, Linkoping, Sweden.
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2001 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 308-310, 102-105 p.Article in journal (Refereed) Published
Abstract [en]

The in-plane and in-depth characteristics of the GaN and InGaN epilayers grown by the metalorganic chemical vapour deposition (MOCVD) on three different substrates (sapphire, SiC and bulk GaN) are evaluated. Relatively large intensity fluctuations of "edge" GaN and InGaN emissions are observed and are related to the details of the micro-structure of the GaN and InGaN films studied. The experiments indicate a nonuniform defect distribution in all types of the MOCVD films studied. In particular, the decoration of structural defects with impurities, an increased defect accumulation at the interfaces and a surprisingly small influence of the micro-structure on the in-plane homogeneity of the yellow band cathodoluminescence emission are observed. © 2001 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2001. Vol. 308-310, 102-105 p.
Keyword [en]
Defects distribution, Gan, InGaN
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-47191DOI: 10.1016/S0921-4526(01)00671-8OAI: oai:DiVA.org:liu-47191DiVA: diva2:268087
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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