Passivation of p-type dopants in 4H-SiC by hydrogen
2001 (English)In: Physica B, Vols. 308-310, 2001, Vol. 308-310, 722-725 p.Conference paper (Refereed)
Experimental investigations showed passivation of the p-type dopants B and Al in 4H-SiC by the formation of B+H and Al+H complexes. The dissociation energies of these complexes differed by 0.9 eV. Ab initio supercell calculations have been performed to investigate the interaction of H with B and Al in hexagonal 4H-SiC. The total energy, geometry and electronic structure of the possible complexes have been determined. Site dependencies have also been investigated. The most stable configurations were found with H at a bond center site next to B at the Si site, and with H at the antibonding site of a carbon atom which is first neighbor to Al at a Si site. Both the BSi+HBC and the AlSi+HAB(C) complexes turned out to be electrically inactive. The different structure of the passivated complexes explains the observed difference in their dissociation energy: the calculated difference of the binding energies of these complexes is 0.9 eV, which agrees well with the experimental finding. © 2001 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2001. Vol. 308-310, 722-725 p.
Aluminum, Boron, Hydrogen, Passivation, SiC
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47216DOI: 10.1016/S0921-4526(01)00882-1OAI: oai:DiVA.org:liu-47216DiVA: diva2:268112