Microwave properties of tunable capacitors basee on magnetron sputtered ferroelectric Na0.5K0.5NbO3 film on low and high resistivity silicon substrates
2001 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, Vol. 39, no 1-4, 359-366 p.Conference paper (Other academic)
In this work, small signal DC voltage dependent dielectric permittivity, loss tangent, and tuneability of magnetron sputtered epitaxial Na0.5K0.5NO3 films are studied experimentally. (100)-oriented Na0.5K0.5NbO3 films are deposited onto SiO2-buffered CMOS grade low resistivity (p = 10-20 cm) and high resistivity (p = 15-45 kcm) silicon substrates. Planar capacitors with 2 or 4 m gaps between electrodes have been fabricated on top of ferroelectric films. These devices have been characterized in the frequency range 1.0 MHz to 50 GHz at temperatures 30 - 300K. Na0.5K0.5NbO3/SiO2/Si structures on high resistivity silicon substrate exhibit C-V performances typical for Metal-Insulator- Semiconductor (MIS) capacitors. At low frequencies, f 1.0 GHz, the large tuneability and large losses are associated with the MIS structure, while at higher microwave frequencies the tuneability is mainly associated with the ferroelectric, film. At 1.0 MHz and room temperature, the tuneability of Na0.5K0.5NbO3/SiO2/Si structures more than 90%, reducing to 10-15 % at 50 GHz. The losses decrease with increasing the DC bias and frequency. A Q-factor more than 15 at 50 GHz is observed. The dielectric permittivity of the Na0.5K0.5NbO3 film is in the range 50-150 at frequencies 0.045-50 GHz. On low resistivity substrate the performance of Na0.5K0.5NbO3 films is completely screened by the high losses in silicon, and the tuneability is negligible. © 2001 Taylor and Francis.
Place, publisher, year, edition, pages
2001. Vol. 39, no 1-4, 359-366 p.
Dielectric permittivity, Ferroelectric, Microwave loss, Na 0.5K0.5NbO3, Tuneability
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47221DOI: 10.1080/10584580108011959OAI: oai:DiVA.org:liu-47221DiVA: diva2:268117