Resonant scattering in delta-doped heterostructures
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 79, no 18, 2913-2915 p.Article in journal (Refereed) Published
We demonstrate the utility of resonant x-ray scattering in probing the structure of doping layers at a heterostructure interface. The positions of germanium layers inserted at the interface of a silicon epitaxial film assert a strong influence of the phase of the scattered intensity along the crystal truncation rods. The phase of the scattering, and hence the internal structure of the layers, can be determined conveniently by analyzing its energy dependence in the vicinity of the Germanium absorption edge at 11.103 keV. © 2001 American Institute of Physics.
Place, publisher, year, edition, pages
2001. Vol. 79, no 18, 2913-2915 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47238DOI: 10.1063/1.1415352OAI: oai:DiVA.org:liu-47238DiVA: diva2:268134