Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
2001 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 231, no 3, 420-427 p.Conference paper (Other academic)
The critical impurity concentration Nc of the metal-nonmetal (MNM) transition for the cubic GaN, InN and AlN systems, is calculated using the following two different criteria: vanishing of the donor binding energy and the crossing point between the energies in the metallic and insulating phases. A dielectric function model with a Lorentz-Lorenz correction is used for the insulating phase. The InN presents an order of magnitude increase in Nc as compared to the other two systems. The electrical resistivity of the Si-donor system GaN is investigated theoretically and experimentally from room temperature down to 10 K. It presents a metallic character above a certain high impurity concentration identified as Nc. The samples were grown by plasma assisted molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. The model calculation is carried out from a recently proposed generalized Drude approach (GDA) presenting a very good estimation for the metallic region. The band-gap shift (BGS) of Si-doped GaN has also been investigated above the MNM transition where this shift is observed. Theoretical and experimental results have a rough agreement in a range of impurity concentration of interest. © 2001 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2001. Vol. 231, no 3, 420-427 p.
A1. Characterization, A1. Doping, A3. Molecular beam epitaxy, B1. Nitrides
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47252DOI: 10.1016/S0022-0248(01)01473-7OAI: oai:DiVA.org:liu-47252DiVA: diva2:268148