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Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
Royal Institute of Technology, Solid State Electronics, P. O. Box E229, SE-164 40 Kista-Stockholm, Sweden.
Royal Institute of Technology, Solid State Electronics, P. O. Box E229, SE-164 40 Kista-Stockholm, Sweden.
Royal Institute of Technology, Solid State Electronics, P. O. Box E229, SE-164 40 Kista-Stockholm, Sweden.
Royal Institute of Technology, Solid State Electronics, P. O. Box E229, SE-164 40 Kista-Stockholm, Sweden, Oslo University, Physical Electronics, Department of Physics, P. B. 1048 Blindern, N-0316 Oslo, Norway.
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 13, 2016-2018 p.Article in journal (Refereed) Published
Abstract [en]

Heavily Al-doped 4H-SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500°C and 2000°C for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions (ion images). Transmission electron microscopy (TEM) has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of ~2 × 1020 Al/cm3 (1900°C) is extracted. Three-dimensional ion images show that the Al distribution does not remain homogeneous in layers heat treated at 1700°C or above when the Al concentration exceeds 2 × 1020 cm-3. Al-containing precipitates are identified by energy-filtered TEM. © 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 79, no 13, 2016-2018 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47259DOI: 10.1063/1.1402160OAI: oai:DiVA.org:liu-47259DiVA: diva2:268155
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Persson, PerHultman, Lars

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