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Photoluminescene line-shape analysis in quantum wells embedded in superlattices
Department of Condensed Matter Physics, Faculty of Physics, Sofia University, 5 Blvd. J. Bourchier, Sofia 1164, Bulgaria.
Department of Condensed Matter Physics, Faculty of Physics, Sofia University, 5 Blvd. J. Bourchier, Sofia 1164, Bulgaria.
Department of Condensed Matter Physics, Faculty of Physics, Sofia University, 5 Blvd. J. Bourchier, Sofia 1164, Bulgaria.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2001 (English)In: Materials science & engineering. C, biomimetic materials, sensors and systems, ISSN 0928-4931, E-ISSN 1873-0191, Vol. 15, no 1-2, 75-77 p.Article in journal (Refereed) Published
Abstract [en]

The temperature evolution of the main photoluminescence (PL) mechanisms, in GaAs quantum wells embedded in short-period AlAs/GaAs superlattices, is investigated. PL spectra are measured from 2 to 300 K. A detailed line-shape analysis of the PL peaks is performed by means of a statistical model, including both free exciton and free carrier recombination. The fits based on this model reproduce satisfactorily the experimental PL line shapes and allow to assess quantitatively the relative contributions of free excitons and free carriers to the radiative recombination at different temperatures. The results indicate the predominant role of free excitons in the radiative recombination up to room temperature, and are consistent with the mass action law. © 2001 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2001. Vol. 15, no 1-2, 75-77 p.
Keyword [en]
AIAs/GaAs, Embedded quantum wells, Line-shape analysis, Photoluminescence
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47260DOI: 10.1016/S0928-4931(01)00239-9OAI: oai:DiVA.org:liu-47260DiVA: diva2:268156
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Ivanov, Ivan Gueorguiev

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